A SYSTEM FOR MEASURING DEEP-LEVEL SPATIAL CONCENTRATION DISTRIBUTIONSWANG KL.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 449-453; BIBL. 22 REF.Article

DEFECT DISTRIBUTION NEAR THE SURFACE ON ELECTRON-IRRADIATED SILICONWANG KL.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 6; PP. 547-548; BIBL. 14 REF.Article

MEASUREMENTS OF RESIDUAL DEFECTS AND 1/F NOISE IN ION-IMPLANTED P-CHANNEL MOSFET'S = MESURE DES DEFAUTS RESIDUELS ET DU BRUIT EN 1/F DANS LES TRANSISTORS A EFFET DE CHAMP MOS A CANAL P, OBTENUS PAR IMPLANTATION D'IONSWANG KL.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 4; PP. 478-484; BIBL. 21 REF.Article

MOS INTERFACE-STATE DENSITY MEASUREMENTS USING TRANSIENT CAPACITANCE SPECTROSCOPYWANG KL.1980; IEEE TRANS-ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2231-2239; BIBL. 32 REF.Article

A DETERMINATION OF INTERFACE STATE ENERGY DURING THE CAPTURE OF ELECTRONS AND HOLES USING DLTSWANG KL.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 819-821; BIBL. 12 REF.Article

OPTIMUM TRANSPORT IN CHARGED PARTICLE ANALYSERSWANG KL.1972; J. PHYS. E; G.B.; DA. 1972; VOL. 5; NO 12; PP. 1193-1196; BIBL. 20 REF.Serial Issue

PRIMARY DEFECTS IN LOW-FLUENCE ION-IMPLANTED SILICONWANG KL.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 48-50; BIBL. 11 REF.Article

DEFECT SPATIAL DISTRIBUTIONS IN ANNEALED ION-IMPLANTED SILICON MEASURED BY A TRANSIENT CAPACITANCE TECHNIQUE.WANG KL.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 11; PP. 700-702; BIBL. 18 REF.Article

QUENCHED-IN BULK DEFECT AND INTERFACE STATES IN MOS STRUCTURES MEASURED BY TRANSIENT CAPACITANCE SPECTROSCOPYWANG KL.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 10; PP. 1664-1667; BIBL. 25 REF.Article

A TRANSIENT OPTICAL REFLECTIVITY STUDY OF LASER ANNEALING OF ION-IMPLANTED SILICON THRESHOLDS AND KINETICSLIU YS; WANG KL.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 6; PP. 363-365; BIBL. 4 REF.Article

DETERMINATION OF INTERFACE AND BULK-TRAP STATES OF IGFET'S USING DEEP-LEVEL TRANSIENT SPECTROSCOPY.WANG KL; EVWARAYE AO.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 10; PP. 4574-4577; BIBL. 15 REF.Article

DEFECT FORMATION CHEMISTRY OF EL2 CENTER AT E_C=0.83 EV IN ION-IMPLANTED GALLIUM ARSENIDELI GP; WANG KL.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 8653-8662; BIBL. 41 REF.Article

AUGER ELECTRON SPECTROSCOPY OF A STABLE GERMANIUM OXIDE.WANG KL; JOSHI A.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 927-932; BIBL. 27 REF.Conference Paper

A STUDY OF GERMANIUM/SIO₂ MIS STRUCTURES BY THE USE OF SECONDARY ION MASS SPECTROMETRY.WANG KL; STORMS HA.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2539-2549; BIBL. 27 REF.Article

A NUMERICAL SOLUTION TO THE DYNAMIC LOAD, FILM THICKNESS, AND SURFACE TEMPERATURES IN SPUR GEARS. I, ANALYSIS. II, RESULTSWANG KL; CHENG HS.1981; J. MECH. DES.; ISSN 0161-8458; USA; DA. 1981; VOL. 103; NO 4; PP. 177-194; BIBL. 35 REF.Article

MODES OF GRATING WAVEGUIDE.HAUS HA; WANG KL.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 3 PART. 1; PP. 1061-1069; BIBL. 10 REF.Article

SCATTERING OF RAYLEIGH WAVES BY POST SPACERSWANG KL; HAUS HA.1979; I.E.E.E. TRANS. SONICS ULTRASON.; USA; DA. 1979; VOL. 26; NO 1; PP. 45-53; BIBL. 15 REF.Article

RELATIONSHIPS OF THE CHEMICAL AND ELECTRICAL INTERFACIAL PROPERTIES OF GERMANIUM-SIO₂ SYSTEMS.WANG KL; GRAY PV.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 9; PP. 1392-1398; BIBL. 19 REF.Article

A NEW METHOD TO ELECTRICALLY DETERMINE EFFECTIVE MOSFET CHANNEL WIDTHYING REN MA; WANG KL.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1825-1827; BIBL. 9 REF.Article

EXPERIMENTAL VERIFICATION OF MODE SHAPE IN S.A.W. GRATING RESONATORS.COLDREN LA; HAUS HA; WANG KL et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 21; PP. 642-644; BIBL. 12 REF.Article

ELECTRICAL PROPERTIES OF SINGLE-CRYSTAL SILICON LAYERS FORMED FROM POLYCRYSTALLINE SILICON BY SOLID PHASE EPITAXYWANG KL; LI GP; SIGMON TW et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 9; PP. 709-711; BIBL. 15 REF.Article

RELATIONSHIPS OF ELECTRICAL PROPERTIES AND MELTING THRESHOLD IN LASER-ANNEALED ION-IMPLANTED SILICONWANG KL; LIU YS; BURMAN C et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 263-265; BIBL. 18 REF.Article

ENHANCEMENT OF EFFECTIVE BARRIER HEIGHT IN TI-SILICON SCHOTTKY DIODE USING LOW-ENERGY ION IMPLANTATIONLI SS; KIM JS; WANG KL et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 7; PP. 1310-1312; BIBL. 7 REF.Article

GROWTH AND PROPERTIES OF SILICON FILMS ON ALUMINIUM-NITRIDE FILMS ON SAPPHIRE.WANG KL; LAKIN KM; LIU JK et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1580-1582; BIBL. 12 REF.Article

GROWTH MORPHOLOGY AND SURFACE-ACOUSTIC-WAVE MEASUREMENTS OF ALN FILMS ON SAPPHIRE. = MORPHOLOGIE DE LA CROISSANCE ET MESURES D'ONDES ACOUSTIQUES DE SURFACE POUR DES COUCHES MINCES DE ALN SUR DU SAPHIRLIU JK; LAKIN KM; WANG KL et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3703-3704; BIBL. 18 REF.Article